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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using Lesker sputter tool: Difference between revisions

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SiO<sub>2</sub> can be sputter deposited with RF bias in the Sputter-System (Lesker). You will find information on the pressure, max power and expected deposition rate on the [[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Equipment page]] here in LabAdviser. To see the deposition parameters used by others, search the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=244 Process Log] in LabManager.  
SiO<sub>2</sub> can be sputter deposited with RF bias in the Sputter-System (Lesker). You will find information on the pressure, max power and expected deposition rate on the [[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Equipment page]] here in LabAdviser. To see the deposition parameters used by others, search the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=244 Process Log] in LabManager.  


Below you will find the deposition parameters and results of a study on the  surface roughness and oxide insulation quality of the deposited films.
Below you will find the deposition parameters and results of a study on the  surface roughness and oxide insulation quality of the sputtered SiO<sub>2</sub>.


==Surface roughness optimization==
==Surface roughness optimization==
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| align="center" style="background:#f0f0f0;"|'''Reactive O<sub>2</sub> (%)'''
| align="center" style="background:#f0f0f0;"|'''Reactive O<sub>2</sub> (%)'''
| align="center" style="background:#f0f0f0;"|'''Power(W)'''
| align="center" style="background:#f0f0f0;"|'''Power(W)'''
| align="center" style="background:#f0f0f0;"|'''Rq (RMS) (nm)'''
| align="center" style="background:#f0f0f0;"|'''R<sub>q</sub> (RMS) (nm)'''
| align="center" style="background:#f0f0f0;"|'''Thickness'''
| align="center" style="background:#f0f0f0;"|'''Thickness'''
|-
|-
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