Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions
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==Substrate Cleaning (RF Bias)== | |||
The RF cleaning can be used to clean the sample before the deposition. There are depicated recipes for that: | |||
* If PC1 is used, select “Master Bias PC1_Upstream” | |||
* If PC3 is used, select “Master Bias PC3_Upstream” | |||
The user can select rotation speed (10 rpm), process pressure (1-15mTorr) RF power (maximum 100 W) and cleaning time (maximum 1800 s). | |||
==Batch process== | ==Batch process== | ||