Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions
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== Sputter-System Metal-Nitride (PC3) == | == Sputter-System Metal-Nitride (PC3) == | ||
The second process chamber called PC3 consists of two KJLC Torus® 3" magnetron sputtering sources and one height adjustable KJLC Torus® 4" magnetron sputtering source, also with possibility of RF, DC, Pulse DC and HIPIMS sputtering. The chamber has a possibility to do the RF bias on a substrate, which can be used as substrate cleaning before the deposition or used during the deposition to alter the film properties. It is possible to do the co-sputtering (sputtering of two or more sources at the same time) as long as the sources are not sharing the same power supply. | The second process chamber called PC3 consists of two KJLC Torus® 3" magnetron sputtering sources and one height-adjustable KJLC Torus® 4" magnetron sputtering source, also with the possibility of RF, DC, Pulse DC and HIPIMS sputtering. The chamber has a possibility to do the RF bias on a substrate, which can be used as substrate cleaning before the deposition or used during the deposition to alter the film properties. It is possible to do the co-sputtering (sputtering of two or more sources at the same time) as long as the sources are not sharing the same power supply. The chamber is equipped with a residual gas analyzer (RGA) that allows monitoring post-process chemical gas traces. In order to operate the analyzer, the chamber should be pumped to base pressure. | ||
<gallery caption="Process chamber PC 3" widths="600px" heights="600px" perrow="2"> | <gallery caption="Process chamber PC 3" widths="600px" heights="600px" perrow="2"> | ||