Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions

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 = Sputtering deposition system set-up=
-In the graphs below the HfO<sub>2</sub> thickness vs. number of cycles for deposition temperatures between 150 <sup>o</sup>C and 350 <sup>o</sup>C presented. Results have been obtained for <100> 150 mm Si wafers with native oxide, based on ellipsometry study.
+The cluster sputter system is used for deposition of metals, magnetic metals and dielectrics on a single wafer 4" or 6" wafer or several small samples. Samples will be placed to the ten shelves cassette and loaded in the load lock module. After the load lock chamber is pumped down, the sample can be transferred to desired process chamber. The sample will be rotated over the target and can be heated up to 600<sup>o</sup>C while depositing the film. The system is equipped with two process chambers connected to a wafer transfer robot, and a load lock chamber.
 <gallery caption="System set-up and power supply configuration." widths="1000px" heights="600px" perrow="1">
-image:Kaempe_Lesker_image_overview_main.png| Deposition rate of HfO<sub>2</sub> at 150 <sup>o</sup>C. Substrate: Silicon 6" wafer with native oxide.
+image:Kaempe_Lesker_image_overview_main.png| The system set-up showing the different opration modils and power suplies network.<br>HSM-High Strengh Magnet.<br>RGA-Residual GasAnalyser.
 </gallery>