Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions
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== Sputter-System Metal-Oxide (PC1) == | == Sputter-System Metal-Oxide (PC1) == | ||
Chamber PC1 consists of six KJLC Torus® 3" magnetron sputtering sources with possibility of RF, DC, Pulse DC and HIPIMS sputtering. There are Argon, Nitrogen and Oxygen gas lines connected to this chamber. | Chamber PC1 consists of six KJLC Torus® 3" magnetron sputtering sources with possibility of RF, DC, Pulse DC and HIPIMS sputtering. There are Argon, Nitrogen and Oxygen gas lines connected to this chamber. The chamber has a possibility to do the RF bias on a substrate, which can be used as substrate cleaning before the deposition or used during the deposition to alter the film properties. A deposition of magnetic material, which requires high strength magnet (HSM), has to be installed on source 3 in PC1. It is possible to do the co-sputtering (sputtering of two or more sources at the same time) as long as the sources are not sharing the same power supply. | ||
<gallery caption="Process chamber (PC 1)" widths="600px" heights="600px" perrow="2"> | <gallery caption="Process chamber (PC 1)" widths="600px" heights="600px" perrow="2"> | ||