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Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions

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== Sputter-System Metal-Oxide (PC1) ==
== Sputter-System Metal-Oxide (PC1) ==


Chamber PC1 consists of six KJLC Torus® 3" magnetron sputtering sources with possibility of RF, DC, Pulse DC and HIPIMS sputtering. There are Argon, Nitrogen and Oxygen gas lines connected to this chamber.
Chamber PC1 consists of six KJLC Torus® 3" magnetron sputtering sources with possibility of RF, DC, Pulse DC and HIPIMS sputtering. There are Argon, Nitrogen and Oxygen gas lines connected to this chamber. The chamber has a possibility to do the RF bias on a substrate, which can be used as substrate cleaning before the deposition or used during the deposition to alter the film properties. A deposition of magnetic material, which requires high strength magnet (HSM), has to be installed on source 3 in PC1. It is possible to do the co-sputtering (sputtering of two or more sources at the same time) as long as the sources are not sharing the same power supply.
 


<gallery caption="Process chamber (PC 1)" widths="600px" heights="600px" perrow="2">
<gallery caption="Process chamber (PC 1)" widths="600px" heights="600px" perrow="2">