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Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions

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== Sputter-System Metal-Oxide(PC1) ==
== Sputter-System Metal-Oxide(PC1) ==


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chamber called PC1 consists of six KJLC Torus® 3" magnetron sputtering sources with possibility of RF, DC, Pulse DC and HIPIMS sputtering. There are Argon, Nitrogen and Oxygen gas lines connected to this chamber.


<gallery caption="Deposition rates of HfO2 at different temperaturs. ALD window." widths="600px" heights="600px" perrow="2">
<gallery caption="Process chamber (PC 1)" widths="600px" heights="600px" perrow="2">
image:PC1_photo.png| Deposition rate of HfO<sub>2</sub> at 150 <sup>o</sup>C. Substrate: Silicon 6" wafer with native oxide.
image:PC1_photo.png| Photography of the chamber.
image:PC1_during_sputtering.png| Deposition rate of HfO<sub>2</sub> at 150 <sup>o</sup>C. Substrate: Silicon 6" wafer with native oxide.
image:PC1_during_sputtering.png| Deposition from source 2.  
</gallery>
</gallery>


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