Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions
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= Sputtering deposition system | = Sputtering deposition system set-up= | ||
In the graphs below the HfO<sub>2</sub> thickness vs. number of cycles for deposition temperatures between 150 <sup>o</sup>C and 350 <sup>o</sup>C presented. Results have been obtained for <100> 150 mm Si wafers with native oxide, based on ellipsometry study. | In the graphs below the HfO<sub>2</sub> thickness vs. number of cycles for deposition temperatures between 150 <sup>o</sup>C and 350 <sup>o</sup>C presented. Results have been obtained for <100> 150 mm Si wafers with native oxide, based on ellipsometry study. | ||