Jump to content

Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions

← Older editNewer edit →
VisualWikitext
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,346 edits
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,346 edits
Line 235: Line 235:
Bla bla
Bla bla


<gallery caption="Deposition rates of HfO2 at different temperaturs. ALD window." widths="600px" heights="600px"
<gallery caption="Deposition rates of HfO2 at different temperaturs. ALD window." widths="800px" heights="600px"
00px" perrow="2">
00px" perrow="2">
image:Kaempe_Lesker_Load_Loak_image1.png| Deposition rate of HfO<sub>2</sub> at 150 <sup>o</sup>C. Substrate: Silicon 6" wafer with native oxide.
image:Kaempe_Lesker_Load_Loak_image1.png| Deposition rate of HfO<sub>2</sub> at 150 <sup>o</sup>C. Substrate: Silicon 6" wafer with native oxide.
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system"