Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions
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= Sputtering deposition system design= | = Sputtering deposition system design= | ||
In the graphs below the HfO<sub>2</sub> thickness vs. number of cycles for deposition temperatures between 150 <sup>o</sup>C and 350 <sup>o</sup>C presented. Results have been obtained for <100> 150 mm Si wafers with native oxide, based on ellipsometry study. | |||
<gallery caption="Deposition rates of HfO2 at different temperaturs. ALD window." widths="500px" heights="300px" perrow="3"> | |||
image:Kaempe_Lesker_image_overview.png| Deposition rate of HfO<sub>2</sub> at 150 <sup>o</sup>C. Substrate: Silicon 6" wafer with native oxide. | |||
image:Kaempe_Lesker_image_power_supplies.png| Deposition rate of HfO<sub>2</sub> at 200 <sup>o</sup>C. Substrate: Silicon 6" wafer with native oxide. | |||
</gallery> | |||
==Power suppliy configuration== | ==Power suppliy configuration== | ||