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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,324 edits
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|10:00/60:00(stress)<!-- Time [mm:ss] -->
|10:00/60:00(stress)<!-- Time [mm:ss] -->
|February 2017 bghe<!--Tested -->
|February 2017 bghe<!--Tested -->
|-
|-
|MF SIN2<!-- Recipe -->
|44.3 nm/min <!-- Dep. rate [nm/min] -->
|2.01-2.02 <!-- RI -->
|&plusmn; 2.7%<!-- Unif. [%] -->
|? MPa <!-- Stress [MPa] -->
|<!-- Comments -->
|30<!-- SiH4 [sccm] -->
|30<!-- NH3 [sccm] -->
|<!-- N2O [sccm] -->
|1270<!-- N2 [sccm] -->
|850 mTorr<!-- Pressure [mTorr] -->
|100HF8.2"/100LF2.2"<!-- Power [W] -->
|<!-- Load -->
|<!-- Tune -->
|10:00<!-- Time [mm:ss] -->
|February 2020 bghe<!--Tested -->
|-
|-
|LF SIN<!-- Recipe -->
|LF SIN<!-- Recipe -->
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