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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions

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!Temperature [<sup>o</sup>C]
!Temperature [<sup>o</sup>C]
!Pressure [mTorr]
!Pressure [mTorr]
!NH3 gas flow [sccm]
!TEOS gas flow [sccm]
!DCS gas flow [sccm]
!O<math>_2</math> gas flow [sccm]
!Comments
!Comments
|-  
|-  
|"NITRIDE"
|"NITRIDE"
|4" wafers
|4" wafers
1-35 wafers in a run
1-17 wafers in a run
|800 - 825
|725
|230
|230
|75
|75
Line 30: Line 30:
|"SIRICH"
|"SIRICH"
|4" wafers
|4" wafers
1-35 wafers in a run
1-17 wafers in a run
|835
|725
|112
|112
|13
|13
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