Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions
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On the new LPCVD TEOS furnace there are two standard processes for deposition, one for thin oxides called TEOSPNE and one for thicker oxides called TEOSSLOW. The only difference is that in the case of the TEOSSLOW recipe the furnace opens significantly slower. Thick TEOS layers have a tendency to form cracks if they are moved to fast out of the furnace. | On the new LPCVD TEOS furnace there are two standard processes for deposition, one for thin oxides called TEOSPNE and one for thicker oxides called TEOSSLOW. The only difference is that in the case of the TEOSSLOW recipe the furnace opens significantly slower. Thick TEOS layers have a tendency to form cracks if they are moved to fast out of the furnace. | ||
TEOS can be used as an alternative to thermally grown or PECVD oxide, it has a dielectric constant of 3.56 (For thermal oxide it is 3.46). Furthermore TEOS has a very high surface mobility enabling it to fill holes that has a large aspect ratio and leaving the surface quite smooth, hence it also covers corners and side walls very well. | TEOS can be used as an alternative to thermally grown or PECVD oxide, it has a dielectric constant of 3.56 (For thermal oxide it is 3.46). Furthermore TEOS has a very high surface mobility enabling it to fill holes that has a large aspect ratio and leaving the surface quite smooth see figure 2, hence it also covers corners and side walls very well. | ||
==Process parameters for the two standard deposition recipes on the old nitride furnace:== | ==Process parameters for the two standard deposition recipes on the old nitride furnace:== | ||