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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions

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voltage in the order of <math> 10^6 </math>
voltage in the order of <math> 10^6 </math>


Danchip have one [[Specific Process Knowledge/Thin film deposition/B3 Furnace LPCVD TEOS|LPCVD furnace]] for deposition of TEOS: A new furnace (installed in 2008) for deposition of stoichiometric nitride on 4" and 6" wafers and an older furnace (installed in 1995) for deposition of stoichiometric nitride and low stress nitride on 4" wafers. Please, be aware that it is not allowed to deposit low stress nitride i the new nitride furnace (to avoid problems with particles).
Danchip have one [[Specific Process Knowledge/Thin film deposition/B3 Furnace LPCVD TEOS|LPCVD furnace]] for deposition of TEOS: The furnace was installed in 1995 and can handle 4" wafers. It is furthermore possible to dope the TEOS with either Boron or phosperoues Please, be aware that it is not allowed to deposit low stress nitride i the new nitride furnace (to avoid problems with particles).


On the new LPCVD nitride furnace there are two standard processes for deposition of stoichiometric nitride, one for 4" wafers called "4NITDAN" and one for 6" wafers called "6NITDAN". The old LPCVD nitride furnace is mainly dedicated for deposition of low stress nitride, which does affect the cleanliness of the furnace, but stoichiometric nitride can also be deposited in the furnace. On this furnace the process for stoichiometric nitride is called "NITRIDE", and the process for low stress nitride (silicon rich nitride) is called "SIRICH"
On the new LPCVD nitride furnace there are two standard processes for deposition of stoichiometric nitride, one for 4" wafers called "4NITDAN" and one for 6" wafers called "6NITDAN". The old LPCVD nitride furnace is mainly dedicated for deposition of low stress nitride, which does affect the cleanliness of the furnace, but stoichiometric nitride can also be deposited in the furnace. On this furnace the process for stoichiometric nitride is called "NITRIDE", and the process for low stress nitride (silicon rich nitride) is called "SIRICH"
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