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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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|-  
|-  
| SiH<sub>4</sub> flow
| SiH<sub>4</sub> flow
|30 sccm
|40 sccm
|-
|-
|NH<sub>3</sub> flow
|NH<sub>3</sub> flow
|30 sccm
|55 sccm
|-
|-
|N<sub>2</sub> flow
|N<sub>2</sub> flow
|1470 sccm
|1960 sccm
|-  
|-  
|Pressure
|Pressure
|845 mTorr
|900 mTorr
|-
|-
|RF-power
|RF-power
|
|
*HF: 100 W 7.8s
HF: 20 W
*LF: 100 W 2.2s
|-
|-
|}
|}
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