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LabAdviser/Technology Research/Organic Ice Resists for Electron-Beam Lithography - Instrumentation and Processes/Electron-Beam Lithography on Organic Ice Resists: Difference between revisions

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==Etching==
==Etching==
 
[[image:Etch_OIR.png|500px|thumb|SEM images of Si and SiO2 etch using OIR masks.]]
As other organic lithographic resists, OIR patterns are able to withstand the chemical and physical action of reactive species protecting the underlying material, while the surrounding areas are gradually removed.
As other organic lithographic resists, OIR patterns are able to withstand the chemical and physical action of reactive species protecting the underlying material, while the surrounding areas are gradually removed.