LabAdviser/Technology Research/Organic Ice Resists for Electron-Beam Lithography - Instrumentation and Processes/Electron-Beam Lithography on Organic Ice Resists: Difference between revisions
Appearance
No edit summary |
|||
| Line 21: | Line 21: | ||
==Etching== | ==Etching== | ||
[[image:Etch_OIR.png|500px|thumb|SEM images of Si and SiO2 etch using OIR masks.]] | |||
As other organic lithographic resists, OIR patterns are able to withstand the chemical and physical action of reactive species protecting the underlying material, while the surrounding areas are gradually removed. | As other organic lithographic resists, OIR patterns are able to withstand the chemical and physical action of reactive species protecting the underlying material, while the surrounding areas are gradually removed. | ||