Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions
| Line 62: | Line 62: | ||
|- | |- | ||
|HF SiN <!-- Recipe --> | |HF SiN <!-- Recipe --> | ||
|<!-- Dep. rate [nm/min] --> | |12.2-12.4 nm/min<!-- Dep. rate [nm/min] --> | ||
|<!-- RI --> | |2.017-2.021<!-- RI --> | ||
|<!-- Unif. [%] --> | |± 1.2-1.6%<!-- Unif. [%] --> | ||
|<!-- Stress [MPa] --> | |Tensile: 431.6 MPa<!-- Stress [MPa] --> | ||
|<!-- Comments --> | |<!-- Comments --> | ||
|<!-- SiH4 [sccm] --> | |40<!-- SiH4 [sccm] --> | ||
|<!-- NH3 [sccm] --> | |55<!-- NH3 [sccm] --> | ||
|<!-- N2O [sccm] --> | |<!-- N2O [sccm] --> | ||
|<!-- N2 [sccm] --> | |1960<!-- N2 [sccm] --> | ||
|<!-- Pressure [mTorr] --> | |900 mTorr<!-- Pressure [mTorr] --> | ||
|<!-- Power [W] --> | |20 W<!-- Power [W] --> | ||
|<!-- Load --> | |<!-- Load --> | ||
|<!-- Tune --> | |<!-- Tune --> | ||