|
|
| Line 9: |
Line 9: |
| |-style="background:Black; color:White" | | |-style="background:Black; color:White" |
| ! Parameter | | ! Parameter |
| | | | |Recipe |
| | !|Dep. rate [nm/min] |
| | !|RI |
| | !|Unif. [%] |
| | !|Stress [MPa] |
| | !|Comments |
| | !|SiH4 [sccm] |
| | !|NH3 [sccm] |
| | !|N2O [sccm] |
| | !|N2 [sccm] |
| | !|Pressure [mTorr] |
| | !|Power [W] |
| | !|Load |
| | !|Tune |
| | !|Time [mm:ss] |
| | |
| | | |
| |- | | |- |
| Line 35: |
Line 50: |
| |} | | |} |
|
| |
|
|
| |
|
| |
|
| |
| {| border="2" cellspacing="2" cellpadding="3"
| |
| |-style="background:DarkGray; color:White"
| |
| !Material to be etched
| |
| !Etch rate using SiO2_res
| |
| |-
| |
| |Thermal oxide
| |
| |
| |
| *'''~230nm/min (5% etch load)''' - etch load dependency [[/AOE SiO2 etch load dependency|'''see here''']]
| |
| *~200 nm/min ''fall 2016 by Martin Lind Ommen @nanotech''
| |
| |-
| |
| |TEOS oxide (5% load)
| |
| |'''233nm/min ±0.7%''' - "±" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 ''by LN/BGE@danchip''
| |
| |-
| |
| |PECVD1 (standard) oxide (5% load)
| |
| |'''242nm/min ±0.6%''' - "±" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 by ''LN/BGE@danchip''
| |
| |-
| |
| |Al2O3 from the ALD
| |
|
| |
| |
| |
| *34.2 nm/min (1:6 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
| |
| *50nm can be etched in 10min - [[/Etch of Al2O3|'''See results here''']] etched in November 2014 by ''FRSTO@danchip''
| |
| |-
| |
| |Silicon rich nitride from furnace B2
| |
| |136nm was etched in 1min (whole wafer) - etched in October 2015 by ''bghe@danchip''
| |
| |-
| |
| |Cr
| |
| |6 nm/min (1:33 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
| |
| |-
| |
| |Al
| |
| |25nm/min (1:8 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
| |
| |-
| |
| |}
| |
|
| |
|
| <br clear="all" /> | | <br clear="all" /> |
