Jump to content

LabAdviser/Technology Research/Fabrication of Hyperbolic Metamaterials using Atomic Layer Deposition/AZO gratings: Difference between revisions

← Older editNewer edit →
VisualWikitext
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,346 edits
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,346 edits
Line 34: Line 34:
|-
|-
!1.1
!1.1
|Plasma surface treatment
|Plasma surface treatment.
|To ensure clean surface, the 100 mm Si wafer is treated by O<sub>2</sub>/N<sub>2</sub> plasma. (Optional step)
|To ensure clean surface, the 100 mm Si wafer is treated by O<sub>2</sub>/N<sub>2</sub> plasma. (Optional step)
|
|
Line 47: Line 47:
|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!1.2
!1.2
|DUV Resist patterning
|DUV Resist patterning.
|DUV
|DUV
|[[Specific_Process_Knowledge/Lithography/DUVStepperLithography|DUV Stepper Lithography]].  
|[[Specific_Process_Knowledge/Lithography/DUVStepperLithography|DUV Stepper Lithography]].  
Line 55: Line 55:
|-
|-
!1.3
!1.3
|Deep reactive ion etching (DRIE)
|Deep reactive ion etching (DRIE).
|DRIE; [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/DUVetch|Recipe: PolySOI10]] Recipe needs to be tuned. Adjusted parameters: temperature, etching and passivation times.
|DRIE; [[Specific_Process_Knowledge/Etch/DRIE-Pegasus/DUVetch|Recipe: PolySOI10]] Recipe needs to be tuned. Adjusted parameters: temperature, etching and passivation times.
| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus|DRIE Pegasus]].
| [[Specific_Process_Knowledge/Etch/DRIE-Pegasus|DRIE Pegasus]].
Line 64: Line 64:
|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!1.4
!1.4
|Plasma surface treatment
|Plasma surface treatment.
|To ensure that remainings of DUV resist are gone, samples are treated by O<sub>2</sub>/N<sub>2</sub> plasma. (Optional step)
|To ensure that remainings of DUV resist are gone, samples are treated by O<sub>2</sub>/N<sub>2</sub> plasma. (Optional step)
|
|
Line 76: Line 76:
|-
|-
!1.5
!1.5
|Scanning Electron Microscopy inspection  
|Scanning Electron Microscopy inspection.
|By cleaving the sample it is possible to inspect DRIE etched Si trenches in cross-sectional mode
|By cleaving the sample it is possible to inspect DRIE etched Si trenches in cross-sectional mode.
|
|
[[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]]  
[[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]]  
Line 90: Line 90:
|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!1.6
!1.6
|Atomic Layer Deposition of Al-doped ZnO (AZO)
|Atomic Layer Deposition of Al-doped ZnO (AZO).
|Deposition carried at 200<sup>o</sup>C. Thickness is above 100 nm.
|Deposition carried at 200<sup>o</sup>C. Thickness is above 100 nm.
||Equipment used: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD Picosun R200]]. Standard recipe used: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/AZO_deposition_using_ALD| AZO 20T]].
||Equipment used: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD Picosun R200]]. Standard recipe used: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/AZO_deposition_using_ALD| AZO 20T]].
Line 98: Line 98:
|-
|-
!1.7
!1.7
|Scanning Electron Microscopy inspection
|Scanning Electron Microscopy inspection.
|By cleaving the sample it is possible to inspect ALD coatings deposited on Si trenches in cross-sectional mode
|By cleaving the sample it is possible to inspect ALD coatings deposited on Si trenches in cross-sectional mode.
|
|
[[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]]  
[[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]]  
Line 120: Line 120:
|-
|-
!1.9
!1.9
|Scanning Electron Microscopy inspection
|Scanning Electron Microscopy inspection.
|By cleaving the sample it is possible to inspect IBE etching results in cross-sectional mode
|By cleaving the sample it is possible to inspect IBE etching results in cross-sectional mode.
|
|
[[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]]  
[[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]]  
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=LabAdviser/Technology_Research/Fabrication_of_Hyperbolic_Metamaterials_using_Atomic_Layer_Deposition/AZO_gratings"