LabAdviser/Technology Research/Fabrication of Hyperbolic Metamaterials using Atomic Layer Deposition/AZO gratings: Difference between revisions
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=====Si template fabrication===== | =====Si template fabrication===== | ||
The whole fabrication work took place in a class 100 cleanroom. First, standard double side polished Si (100) wafers were selected and RCA cleaned. Conventional deep-UV lithography (DUV stepper: Canon FPA-3000 EX4) was implemented for defining the grating patterns (lines 200 nm wide and 400 nm pitch) on 2x2 cm<sup>2</sup> scale chips. The normal procedure includes a bottom antireflective coating (BARC) and photoresist spinning, followed by spray developing. To promote adhesion and to minimize interference effects, the substrate surface was coated with a 65 nm thick BARC coating (DUV42S-6, Brewer Science, USA) followed by a bake-out at 175°C for 60 s. The positive photoresist (KRF M230Y, JSR Micro, NV) was spin-coated to a thickness of 360 nm and baked at 130°C for 90 s. Thereafter, deep reactive ion etching (DRIE) was used to fabricate trenches in the silicon substrate with a depth of 3 μm. | The whole fabrication work took place in a class 100 cleanroom. First, standard double side polished Si (100) wafers were selected and RCA cleaned (optional). Conventional deep-UV lithography (DUV stepper: Canon FPA-3000 EX4) was implemented for defining the grating patterns (lines 200 nm wide and 400 nm pitch) on 2x2 cm<sup>2</sup> scale chips. The normal procedure includes a bottom antireflective coating (BARC) and photoresist spinning, followed by spray developing. To promote adhesion and to minimize interference effects, the substrate surface was coated with a 65 nm thick BARC coating (DUV42S-6, Brewer Science, USA) followed by a bake-out at 175°C for 60 s. The positive photoresist (KRF M230Y, JSR Micro, NV) was spin-coated to a thickness of 360 nm and baked at 130°C for 90 s. Thereafter, deep reactive ion etching (DRIE) was used to fabricate trenches in the silicon substrate with a depth of 3 μm. | ||
=====Deep reactive ion etching====== | =====Deep reactive ion etching====== | ||