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The required high-quality ultrathin layers (around 10 nm) can be fabricated using atomic layer deposition (ALD). ALD is a cyclic self-limiting thin film deposition technology allowing molecule level thickness control. As the deposition relies on a surface reaction, conformal pinhole free films can be deposited.
The required high-quality ultrathin layers (around 10 nm) can be fabricated using atomic layer deposition (ALD). ALD is a cyclic self-limiting thin film deposition technology allowing molecule level thickness control. As the deposition relies on a surface reaction, conformal pinhole free films can be deposited.
The main challenge of implementation of ALD processing for HMM fabrication is the requirement for depositing alternating layers of metals (Ag, Cu, W) and dielectric spacers (alumina, titania, silica) . Required thicknesses are in the range 5-15 nm for metals and 10-20 nm for dielectrics (oxides).<br>
The main challenge of implementation of ALD processing for HMM fabrication is the requirement for depositing alternating layers of metals (Ag, Cu, W) and dielectric spacers (alumina, titania, silica) . Required thicknesses are in the range 5-15 nm for metals and 10-20 nm for dielectrics (oxides).<br>
==Publications==
===Name of publication1 made in this project===
Reference and link to the publication
*Link Process flow(s) relevant to this publication
*Link(s) to Process development made in connection to this publication this is decribes in either LabAdviser or Process2Share.
===Name of publication2 made in this project===
Reference and link to the publication
*Link Process flow(s) relevant to this publication
*Link(s) to Process development made in connection to this publication this is decribes in either LabAdviser or Process2Share.
===Name of publication3 made in this project===
Reference and link to the publication
*Link Process flow(s) relevant to this publication
*Link(s) to Process development made in connection to this publication this is decribes in either LabAdviser or Process2Share.
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