Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si: Difference between revisions
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====Process parameters==== | ====Process parameters==== | ||
The test was made on a n-type silicon wafer (100) with a 110 nm grown thermal oxide) | |||
'''Pressure:''' 250 mtorr | '''Pressure:''' 250 mtorr | ||
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'''Test wafer position:''' Center of the boat | '''Test wafer position:''' Center of the boat | ||
A better uniformity was achieved by annealing | A better uniformity of the resistivity across the wafer was achieved by subsequently annealing in N<sub>2</sub>, the annealing was done in Anneal Oxide Furnace (C1). Measured film thickness was 370 nm and the sheet resistance was measured to 200 Ω/sq +/- 15 Ω/sq. | ||