Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si: Difference between revisions
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'''Test wafer position:''' Center of the boat | '''Test wafer position:''' Center of the boat | ||
A better uniformity was achieved by annealing in N<sub>2</sub>. Measured film thickness was approximately 370 nm and the sheet resistance was measured to 200 | A better uniformity was achieved by annealing in N<sub>2</sub>. Measured film thickness was approximately 370 nm and the sheet resistance was measured to 200 [Ω<sub>sq</sub>] +/- 15 [Ω<sub>sq</sub>]. | ||