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Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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'''Time:''' 75 min
'''Time:''' 75 min


'''Anneal:''' @950°C for 60 min
'''Anneal:''' @950°C for 60 min in N<sub>2


'''Test wafer position:''' Center of the boat
'''Test wafer position:''' Center of the boat
A better uniformity was achieved by annealing in N<sub>2. Measured film thickness was approximately 370 nm and the sheet resistance was measured to 200 \Ohms/square +/- 15 \Ohms/square.
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