Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si: Difference between revisions
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[[image:Boron concentration2.jpg|627x424px|left|thumb|Boron concentration measured by SIMS. Result from Thomas Pedersen, Nanotech, Sep 2015.]] | [[image:Boron concentration2.jpg|627x424px|left|thumb|Boron concentration measured by SIMS. Result from Thomas Pedersen, Nanotech, Sep 2015.]] | ||
==Boron-doped amorphous silicon by using 4" LPCVD polysilicon furnace (B4) == | |||
''Result from Trine Holm Christensen, @Space, Feb. 2015'' | |||
====Process parameters==== | |||
'''Pressure:''' 250 mtorr | |||
'''Temperature:''' 580 °C | |||
'''Silane (SiH<sub>4</sub>) flow:''' 80 sccm | |||
'''Diborane (B<sub>2</sub>H<sub>6</sub>) flow:''' 7 sccm | |||
'''Time:''' 75 min | |||
'''Anneal:''' @950°C for 60 min | |||
'''Test wafer position:''' Center of the boat | |||