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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,324 edits
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In the middel: '''72.6-76.4 nm/min''' (2014-08-13 BGHE) <br>
Variation over 3 wafers: '''71.4-78.6 nm/min''' (2014-08-13 BGHE)
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'''~5%''' in the middel (4") (2014-08-13 BGHE)<br>
'''~10%''' over 3 wafers (2014-08-13 BGHE)
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