Specific Process Knowledge/Lithography: Difference between revisions

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===[[Specific Process Knowledge/Lithography/WaferCleaning|Wafer Cleaning]]===
===[[Specific Process Knowledge/Lithography/WaferCleaning|Wafer Cleaning]]===
===[[Specific Process Knowledge/Lithography/Characterization|Characterization]]===
===[[Specific Process Knowledge/Lithography/Characterization|Characterization]]===
===[[Specific Process Knowledge/Lithography/LaserWriter|LaserWriter]]===
===[[Specific Process Knowledge/Lithography/DirectLaserWriter|Direct Laser Writer]]===
===[[Specific Process Knowledge/Lithography/DUVStepper|DUV Stepper]]===
===[[Specific Process Knowledge/Lithography/DUVStepper|DUV Stepper]]===
===[[Specific Process Knowledge/Lithography/EBeamLithography|E-Beam Lithography]]===
===[[Specific Process Knowledge/Lithography/EBeamLithography|E-Beam Lithography]]===
===[[Specific Process Knowledge/Lithography/NanoImprintLithography|NanoImprint Lithography]]===
===[[Specific Process Knowledge/Lithography/NanoImprintLithography|NanoImprint Lithography]]===
===[[Specific Process Knowledge/Lithography/3DLithography|3D Lithography]]===
===[[Specific Process Knowledge/Lithography/3DLithography|3D Lithography]]===

Revision as of 12:47, 30 May 2013

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Available lithography methods at Danchip

There are a broad varity of lithography methods at Danchip. The methods are compared here to make it easier for you to compare and choose the one that suits your needs.

Comparing lithography methods at Danchip

UV Lithography DUV Lithography E-beam Lithography Imprint Lithography Two photon polymerization Lithography
Generel description Generel description - method 1 Generel description - method 2 3 4 5
Pattern size range
  • ~1µm and up
  • ~200nm and up
  • ~10nm and up
  • ~20nm and up
  • 3D: 0.3 µm spot; 1.3 µm high
Resist type
  • UV sensitive:
    • AZ
    • SU-8
  • DUV sensitive
    • KSF M230Y
    • KSF M35G
  • E-beam sensitive
    • ZEP502A (positive)
    • HSQ (negative)
    • SU-8
  • Imprint polymers:
    • ??
  • UV cross-linking:
    • IP photoresists
    • SU-8
Resist thickness range
  • ~0.5µm to 20µm?
  • ~50nm to 2µm?
  • ~30nm to 0.5 µm
  • ~20nm to 10µm?
  • ?nm - ?µm
Typical exposure time

2s-30s pr. wafer

?-? pr. ?

Depends on dose (in units of muC/cm2), estimate exposure time on sheet 2 of e-beam logbook

? pr. wafer

? pr. µm2

Substrate size
  • small samples
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers

We have cassettes that fit to

  • 4 small samples (20mm, 12mm, 8mm, 4mm)
  • 6 wafers of 50 mm in size
  • 2 wafers of 100 mm in size
  • 1 wafer of 150 mm in size

Only one cassette can be loaded at time

  • small samples
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • Cover slides
  • 50 mm wafers
  • 100 mm wafers
  • IBIDI
Allowed materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3
  • Si, SiO2, III-V materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3



Equipment Pages

Pretreatment

Coaters


UV Exposure

Baking

Developing

Strip, Lift-off

Wafer Cleaning

Characterization

Direct Laser Writer

DUV Stepper

E-Beam Lithography

NanoImprint Lithography

3D Lithography