Specific Process Knowledge/Characterization/KLA-Tencor Surfscan 6420: Difference between revisions

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KLA-Tencor Surfscan 6420

Particle counting of an unpatterned surface. A broad range of particles size from 0.15 µm to greater than 3 µm can be measured on a polished silicon or epitaxial layers. Thin films like Nitride and thermal Oxide can also be inspected. The system will remove small surface roughness so it will not count as particles.

Overview of the performance of the Surfscan 6420 and some process related parameters

Purpose		Detecting, counting and sizing of particles (light point defects)
Performance	Particles size	0.15 µm to 3 µm
	Througput	Up to 100 wafer per hour (200 mm)
	Repeatbility	Within 1%, 1σ (mean count > 500, 0.204 µm diameter latex spheres)
Process parameter range	Process Temperature	Room temperature
Substrates	Batch size	1-25 100 mm wafers 1-25 150 mm wafers 1-25 200 mm wafers (loader has to be changed)
Substrates	Substrate materials allowed	Silicon Thin layers of oxide, nitride and polymer/resist

@@ Line 16: / Line 16: @@
 ==Overview of the performance of the Surfscan 6420 and some process related parameters==
-{| border="2" cellspacing="0" cellpadding="0"
+{| border="2" cellspacing="0" cellpadding="2"
 |-
 !style="background:silver; color:black;" align="center"|Purpose
@@ Line 22: / Line 22: @@
 |style="background:WhiteSmoke; color:black"|
-*Particles counting
+*Detecting, counting and sizing of particles (light point defects)
 |-
 !style="background:silver; color:black" align="center" rowspan="3"|Performance
 |style="background:LightGrey; color:black"|Particles size
 |style="background:WhiteSmoke; color:black"|
-*0.1 µm to 3 µm
+*0.15 µm to 3 µm
 |-
 |style="background:LightGrey; color:black"|Througput
@@ Line 35: / Line 35: @@
 |style="background:LightGrey; color:black"|Repeatbility
 |style="background:WhiteSmoke; color:black"|
-*Within  1%, 1σ (mean count > 500, 0,204 µm diameter latex spheres)
+*Within  1%, 1σ (mean count > 500, 0.204 µm diameter latex spheres)
 |-
-!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
+!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Process parameter range
 |style="background:LightGrey; color:black"|Process Temperature
 |style="background:WhiteSmoke; color:black"|
 *Room temperature
-|-
-|style="background:LightGrey; color:black"|Process pressure
-|style="background:WhiteSmoke; color:black"|
-*1 atm
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*Small wafer pieces can all be used
 *1-25 100 mm wafers
 *1-25 150 mm wafers
-*1-25 200 mm wafers
+*1-25 200 mm wafers (loader has to be changed)
 |-
-| style="background:LightGrey; color:black"|Substrate material allowed
+|style="background:LightGrey; color:black"|Substrate materials allowed
 |style="background:WhiteSmoke; color:black"|
+*Silicon
+*Thin layers of oxide, nitride and polymer/resist
 |-
 |}