Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions
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# Use Process A with precaution at high etch loads - above some 50%. | # Use Process A with precaution at high etch loads - above some 50%. | ||
# Avoid using Process A on bonded wafers, in particular if the etch load is more than 5-10%. The bonding reduces the | # Avoid using Process A on bonded wafers, in particular if the etch load is more than 5-10%. The bonding reduces the heat conduction across the wafer interface so the top wafer will immediately heat up and cause the mask to erode and the bonding polymer to melt. | ||
If you have a bonded sandwich of wafers with very poor heat conduction (typically caused by intermediate polymer layers thicker than a few microns) you are advised to use other etch processes, maybe the deepetch on the ASE. | |||
== Process A performance == | == Process A performance == | ||