Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions
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Process A is optimized for speed and depending on feature size and etch load it will achieve etch rates up to 25-30 µm/min. | Process A is optimized for speed and depending on feature size and etch load it will achieve etch rates up to 25-30 µm/min. | ||
This aggressive etch has a few drawbacks. The | This aggressive etch has a few drawbacks - one of which is the release of energy in the etch process. It is clear that | ||
# The higher the etch rate, the higher rate of released energy. | |||
# The larger an area of silicon, the higher rate of released energy. | |||
== Process A performance == | == Process A performance == | ||