Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch): Difference between revisions
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|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gas flows | |style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gas flows | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*C<math>_4</math>F<math>_8</math>: sccm | *C<math>_4</math>F<math>_8</math>: 0-40 sccm | ||
*O<math>_2</math>: | *O<math>_2</math>: 0-100 sccm | ||
*CF<math>_4</math>: | *CF<math>_4</math>: 0-100 sccm | ||
*H<math>_2</math>: sccm | *H<math>_2</math>: 0-30 sccm | ||
*He: | *He: 0-500 sccm | ||
*N<math>_2</math>: sccm | *N<math>_2</math>: 0-1000 sccm | ||
|- | |- | ||
!style="background:silver; color:black" align="left"|Substrates | !style="background:silver; color:black" align="left"|Substrates | ||