Specific Process Knowledge/Characterization/KLA-Tencor Surfscan 6420: Difference between revisions

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 !style="background:silver; color:black;" align="center"|Purpose
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-*Drive-in of boron
-*Oxidation of silicon
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-*Oxidation of boron phase layer
-*Annealing of the oxide
-|style="background:WhiteSmoke; color:black"|Oxidation:
-*Dry
-*Wet: with torch (H<sub>2</sub>+O<sub>2</sub>)
 |-
 !style="background:silver; color:black" align="center"|Performance
-|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
+|style="background:LightGrey; color:black"| ||style="background:WhiteSmoke; color:black"|
-*Dry SiO<sub>2</sub>: 50 Å  to ~2000 Å (takes too long to make it thicker)
-*Wet SiO<sub>2</sub>: 50 Å to ~3 µm (takes too long to make it thicker)
 |-
-!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
+!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
 |style="background:LightGrey; color:black"|Process Temperature
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-*800-1150 <sup>o</sup>C
+*Room temperature
 |-
 |style="background:LightGrey; color:black"|Process pressure
 |style="background:WhiteSmoke; color:black"|
 *1 atm
-|-
-|style="background:LightGrey; color:black"|Gasses on the system
-|style="background:WhiteSmoke; color:black"|
-*O<sub>2</sub>, H<sub>2</sub> and N<sub>2</sub>
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates