Specific Process Knowledge/Characterization/KLA-Tencor Surfscan 6420: Difference between revisions
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== | ==Overview of the performance of the Surfscan 6420 and some process related parameters== | ||
{| border="2" cellspacing="0" cellpadding=" | {| border="2" cellspacing="0" cellpadding="0" | ||
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!style="background:silver; color:black;" align="center | !style="background:silver; color:black;" align="center"|Purpose | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"| | ||
*Drive-in of boron | |||
* | *Oxidation of silicon | ||
* | *Oxidation of boron phase layer | ||
|style="background:WhiteSmoke; color:black"| | *Annealing of the oxide | ||
* | |style="background:WhiteSmoke; color:black"|Oxidation: | ||
* | *Dry | ||
*Wet: with torch (H<sub>2</sub>+O<sub>2</sub>) | |||
|- | |- | ||
!style="background:silver; color:black" align="center | !style="background:silver; color:black" align="center"|Performance | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | ||
|style="background:WhiteSmoke; color:black"| | *Dry SiO<sub>2</sub>: 50 Å to ~2000 Å (takes too long to make it thicker) | ||
* | *Wet SiO<sub>2</sub>: 50 Å to ~3 µm (takes too long to make it thicker) | ||
* | |||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | |||
|style="background: | |style="background:LightGrey; color:black"|Process Temperature | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *800-1150 <sup>o</sup>C | ||
|- | |- | ||
|style="background:LightGrey; color:black"|Process pressure | |||
|style="background:LightGrey; color:black"| | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *1 atm | ||
|- | |- | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|Gasses on the system | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*O<sub>2</sub>, H<sub>2</sub> and N<sub>2</sub> | |||
* | |||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan=" | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *1-25 100 mm wafers | ||
*1-25 150 mm wafers | |||
* | |||
|- | |- | ||
| style="background:LightGrey; color:black"| | | style="background:LightGrey; color:black"|Substrate material allowed | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *Silicon wafers (new or RCA cleaned wafers) | ||
* | *From A2 furnace directly (e.g. incl. Predep HF) | ||
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|} | |} | ||