Specific Process Knowledge/Etch/Etching of Bulk Glass: Difference between revisions
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= This section is under construction = | = This section is under construction = | ||
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== Comparing silicon oxide etch methods at Danchip [[Image:section under construction.jpg|70px]]== | |||
There are a broad varity of silicon oxide etch methods at Danchip. The methodes are compared here to make it easier for you to compare and choose the one that suits your needs. | |||
*[[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch]] | |||
*[[/SiO2 etch using RIE1 or RIE2|SiO2 etch using RIE1 or RIE2]] | |||
*[[/SiO2 etch using AOE|SiO2 etch using AOE]] | |||
*[[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | |||
==Compare the methods for Silicon Oxide etching== | |||
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![[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide etch (BHF/HF)]] | |||
![[Specific Process Knowledge/Etch/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]] | |||
![[Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] | |||
![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | |||
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!Generel description | |||
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*Isotropic etch | |||
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*Anisotropic etch: vertical sidewalls | |||
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*Anisotropic etch: vertical sidewalls | |||
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*Primarily for pure physical etch by sputtering with Ar-ions | |||
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!Possible masking materials | |||
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*Photoresist | |||
*PolySilicon | |||
*Silicon nitride (LPCVD) | |||
*Blue film | |||
*Cr/Au for deeper etches (plastic beaker) | |||
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*Photoresist | |||
*DUV resist | |||
*E-beam resist | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Metals if they cover less than 5% of the wafer area (ONLY RIE2!) | |||
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*Photoresist | |||
*DUV resist | |||
*E-beam resist | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Aluminium | |||
*Chromium (Please try to avoid this) | |||
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*Any material that is accepted in the machine | |||
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!Etch rate range | |||
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*~75 nm/min (Thermal oxide) in BHF | |||
*~90 nm/min (Thermal oxide) in SIO Etch | |||
*~25 nm/min (Thermal oxide) in 5%HF | |||
*~3-4µm/min in 40%HF | |||
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*Process dependent | |||
*Tested range: ~20nm/min - ~120nm/min | |||
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*Process dependent | |||
*Tested range: ~230nm/min - ~550nm/min | |||
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*Process dependent | |||
*Tested once ~22nm/min | |||
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!Substrate size | |||
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*<nowiki>#</nowiki>1-25 100mm wafers in our 100mm bath | |||
*What can be fitted in a plastic beaker | |||
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*As many small samples as can be fitted on the 100mm carrier. | |||
*<nowiki>#</nowiki>1 100mm wafer (or smaller with carrier) | |||
*<nowiki>#</nowiki>1 150mm wafer (only RIE2 when set up for 150mm) | |||
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*As many small samples as can be fitted on a 100mm wafer | |||
*<nowiki>#</nowiki>1 50 mm wafer fitted on a 100mm wafer | |||
*<nowiki>#</nowiki>1 100 mm wafer | |||
*<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm) | |||
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*As many samples as can be securely fitted on a up to 200mm wafer | |||
*<nowiki>#</nowiki>1 50 mm wafer with special carrier | |||
*<nowiki>#</nowiki>1 100 mm wafer with special carrier | |||
*<nowiki>#</nowiki>1 150 mm wafers with special carrier | |||
*<nowiki>#</nowiki>1 200 mm wafer | |||
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!Allowed materials | |||
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In the dedicated bath: | |||
*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*Blue film | |||
In a plastic beaker: | |||
*No limits cross contamination wise | |||
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*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*DUV resist | |||
*E-beam resist | |||
*Other metals if they cover less than 5% of the wafer area (ONLY RIE2!) | |||
*Quartz/fused silica | |||
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*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*DUV resist | |||
*E-beam resist | |||
*Aluminium | |||
*Chromium (try to avoid it) | |||
*Quartz/fused silica | |||
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*Silicon | |||
*Silicon oxides | |||
*Silicon (oxy)nitrides | |||
*Metals from the +list | |||
*Metals from the -list | |||
*Alloys from the above list | |||
*Stainless steel | |||
*Glass | |||
*III-V materials | |||
*Resists | |||
*Polymers | |||
*Capton tape | |||
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