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| Etch of silicon can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are: | | Etch of silicon can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are: |
| ==Comparison of KOH etch, wet PolySilicon etch, RIE etch, ASE etch and DRIE-Pegasus for etching of Silicon==
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| {| border="2" cellspacing="0" cellpadding="5" align="center"
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| !
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| ! KOH
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| ! PolySilicon etch
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| ! RIE
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| ! ASE
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| ! DRIE-Pegasus
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| |- valign="top"
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| |'''General description'''
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| *Anisotropic etch in the (100)-plan
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| *High selectivity to the other plans
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| *Isotropic etch in Silicon and Polysilicon
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| *Can etch isotropic and anisotropic depending on the process parameters
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| *Anisotropic etch: vertical sidewalls independent of the crystal plans
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| *As RIE but better for high aspect ratio etching and deep etches (higher etch rate)
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| *Good selectivity to photoresist
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| *State-of-the-art dry silicon etcher with atmospheric cassette loader
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| *Extremely high etch rate and advanced processing options
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| |-valign="top"
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| |'''Possible masking materials'''
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| *Silicon Nitride
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| *Silicon Oxide
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| *Photoresist
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| *Photoresist
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| *E-beam resist
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| *Silicon Oxide
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| *Silicon Nitride
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| *Aluminium
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| *Chromium (ONLY RIE2!)
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| *Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
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| *Photoresist
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| *Silicon Oxide
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| *Silicon Nitride
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| *Aluminium
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| *Photoresist and zep resist
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| *Silicon Oxide
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| *Silicon Nitride
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| *Aluminium oxide
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| |- valign="top"
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| |'''Etch rate'''
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| *Si(100) @80<sup>o</sup>C: 1.29+0.05 µm/min
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| *Si(100) @70<sup>o</sup>C: ~0.7 µm/min
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| *Si(100) @60<sup>o</sup>C: ~0.4 µm/min
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| *~100-200 nm/min, highly dependent on doping level
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| *<40nm/min to >600nm/min depending on recipe parameters and mask design
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| *<130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio.
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| *Up to 18-20 µm/min depending on recipe, mask design and aspect ratio.
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| |-valign="top"
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| |'''Size of substrate'''
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| *4" in our standard bath
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| *4", 2" in "Fumehood KOH"
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| *4" in our standard bath
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| *4" (or smaller with carrier)
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| *6" (when it is set up for 6") and 4" (or smaller if you have a carrier)
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| *6" (when it is set up for 6") and 4" (or smaller if you have a carrier)
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| |-valign="top"
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| |'''Batch size'''
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| *25 wafers at a time
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| *1-5 wafers in "Fumehood KOH"
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| *25 wafers at a time
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| *One wafer at a time
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| *One wafer at a time
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| *One wafer at a time but you can load a whole batch of 25 wafers and set up an individual for each one
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| |-valign="top"
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| |'''Allowed materials'''
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| *Silicon
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| *Silicon Oxide
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| *Silicon Nitride
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| *Silicon Oxynitride
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| *Other materials (only in "Fumehood KOH")
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| *Silicon
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| *Silicon Oxide
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| *Silicon Nitride
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| *Silicon Oxynitride
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| *Photoresist
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| *Silicon
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| *Silicon Oxide
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| *Silicon Nitride
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| *Silicon Oxynitride
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| *Photoresist
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| *E-beam resist
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| *Aluminium
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| *Chromium (ONLY RIE2!)
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| *Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
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| *Silicon
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| *Silicon Oxide
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| *Silicon Nitride
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| *Silicon Oxynitride
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| *Photoresist
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| *E-beam resist
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| *Aluminium
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| *Silicon
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| *Silicon Oxide
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| *Silicon Nitride
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| *Silicon Oxynitride
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| *Photoresist
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| *zep resist
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| *Aluminium oxide
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| |-
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| |}
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| =This Part is under construction= | | =This Part is under construction= |
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