Specific Process Knowledge/Etch/RIE (Reactive Ion Etch): Difference between revisions

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 !style="background:silver; color:black;" align="left"|Purpose
-|style="background:LightGrey; color:black"|Deposition of dielectrica ||style="background:WhiteSmoke; color:black"|
+|style="background:LightGrey; color:black"|Dry etch of ||style="background:WhiteSmoke; color:black"|
+*Silicon
 *Silicon oxide
-*Silicon nitride
+*Silicon (oxy)nitride
-*Silicon oxynitride
-*PBSG (Phosphorous Boron doped Silica Glass)
-*Silicon oxide doped with Germanium
 |-
 !style="background:silver; color:black" align="left"|Performance
-|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
+|style="background:LightGrey; color:black"|Etch rates||style="background:WhiteSmoke; color:black"|
-*~10nm - 30µm
+*Silicon: ~0.04-0.8 µm/min
+*Silicon oxide:~0.02-0.15 µm/min
+*Silicon (oxy)nitride:~0.02-? µm/min
 |-
-|style="background:silver; color:black" |.||style="background:LightGrey; color:black"|Index of refraction||style="background:WhiteSmoke; color:black"|
+|style="background:silver; color:black" |.||style="background:LightGrey; color:black"|Anisotropy||style="background:WhiteSmoke; color:black"|
-*~1.4-2.1
+*~Can vary from isotropic to anisotropic with vertical sidewalls and on to a physical etch were the sidewalls are angled but without etching under the mask.
-|-
-|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Step coverage
-|style="background:WhiteSmoke; color:black"|
-*In general: Not so good
-*PBSG: Floats at 1000<sup>o</sup>C
-|-
-|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Film quality
-|style="background:WhiteSmoke; color:black"|
-*Not so dense film
-*Hydrogen will be incorporated in the films
-|-
-!style="background:silver; color:black" align="left"|Process parameter range
-|style="background:LightGrey; color:black"|Process Temperature
-|style="background:WhiteSmoke; color:black"|
-*300 <sup>o</sup>C
 |-
 |style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Process pressure
 |style="background:WhiteSmoke; color:black"|
-*~200-900 mTorr
+*~20-200 mTorr
 |-
 |style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gas flows
 |style="background:WhiteSmoke; color:black"|
-*SiH<math>_4</math>:0-60 sccm
+*SF<math>_6</math>: sccm
-*N<math>_2</math>O:0-3000 sccm
+*O<math>_2</math>O: sccm
-*NH<math>_3</math>:0-1000 sccm
+*CHF<math>_3</math>: sccm
-*N<math>_2</math>:0-3000 sccm
+*CF<math>_4</math>: sccm
-*GeH<math>_4</math>:0-6.00 sccm
+*H<math>_2</math>: sccm
-*5%PH<math>_3</math>:0-99 sccm
+*C<math>_2</math>F<math>_6</math>: sccm
-*5%B<math>_2</math>H<math>_6</math>:0-1000 sccm
 |-
 !style="background:silver; color:black" align="left"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-3 4" wafer per run
+*1 4" wafer per run
-*1 6" wafer per run
+*1 2" wafer per run
-*Or several smaler pieces
+*Or several smaller pieces
-*Deposition on one side of the substrate
 |-
 |style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Substrate material allowed
@@ Line 71: / Line 54: @@
 **with layers of silicon oxide or silicon (oxy)nitride
 *Quartz wafers
+|-
+|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Possible masking material
+|style="background:WhiteSmoke; color:black"|
+*Silicon/PolySi
+*Silicon oxide or silicon (oxy)nitride
+*Aluminium
+*Other metals if the coverage is <5% of the wafer area
 |-
 |style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Material allowed on the substrate