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Specific Process Knowledge/Etch/Etching of Silicon Oxide: Difference between revisions

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*~3-4µm/min in 40%HF
*~3-4µm/min in 40%HF
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*Typically 40-50 nm/min can be increased or decreased by using other recipe parameters.
*Process dependant
*Tested range: ~20nm/min - ~120nm/min  
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AOE
*Process dependant
*Tested range: ~230nm/min - ~550nm/min
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*Process dependant. Has not been tested yet.
*Process dependant. Has not been tested yet.
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