Specific Process Knowledge/Etch/Etching of Silicon Nitride

Silicon nitride can be etched using either wet chemistry or dry etch equipment. Wet chemistry is mainly used to remove all the nitride on the surface (backside and frontside) of a wafer. Dry etching etches one side at a time and can be used to etch structures with several masking materials.

• Wet Silicon Nitride Etch
• Etch of Silicon Nitride using RIE
• Etch of Silicon Nitride using AOE
• IBE/Ion Beam Etching using IBSD Ionfab 300

Comparison of wet Silicon Nitride etch and RIE etch for etching of Silicon Nitride

	Wet Silicon Nitride etch	Buffered HF (BHF)	RIE
General description	Isotropic etch Well suited for removing all nitride on a wafer surface (nitride strip) without a mask. High selectivity Si3N4/Si (>100) and Si3N4/SiO2 (>20) @ 180 C.	Isotropic etch Well suited for removing all PECVD nitride on a wafer surface (nitride strip) without a mask. Etches LPCVD nitride very slowly	Anisotropic etch: vertical sidewalls
Possible masking materials	Silicon Oxide PolySilicon	Photoresist PolySilicon Blue film	Photoresist Silicon Oxide Aluminium Chromium (ONLY RIE2!) Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
Etch rate	Si3N4 @ 180 oC: ~84 Å/min Si3N4 @ 160 oC: ~60 Å/min	PECVD nitride: ~400-1000 Å/min	Typically 40-50 nm/min can be increased or decreased by using other recipe parameters.
Batch size	1-25 wafers at a time	1-25 wafers at a time	1 wafer at a time
Size of substrate	4" wafers	4" wafers	4" wafers or smaller pieces
Allowed materials	Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride	Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist Blue film	Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist Aluminium Chromium (ONLY RIE2!) Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)

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Comparing silicon nitride etch methods at Danchip

There are a broad varity of silicon nitride etch methods at Danchip. The methodes are compared here to make it easier for you to compare and choose the one that suits your needs.

• Wet Silicon Nitride Etch
• Etch of Silicon Nitride using RIE
• Etch of Silicon Nitride using AOE
• IBE/Ion Beam Etching using IBSD Ionfab 300

Compare the methods for Silicon Nitride etching

	Wet Silicon Nitride Etch	BHF	RIE (Reactive Ion Etch)	AOE (Advanced Oxide Etch)	IBE/IBSD Ionfab 300
Generel description	Isotropic etch Well suited for removing all nitride on a wafer surface (nitride strip) without a mask. High selectivity Si3N4/Si (>100) and Si3N4/SiO2 (>20) @ 180 C.	Isotropic etch Well suited for removing all PECVD nitride on a wafer surface (nitride strip) without a mask. Etches LPCVD nitride very slowly	Anisotropic etch: vertical sidewalls	Anisotropic etch: vertical sidewalls Deep etch	Primarily for pure physical etch by sputtering with Ar-ions
Possible masking materials	Silicon Oxide PolySilicon	Photoresist PolySilicon Blue film	Photoresist DUV resist E-beam resist Silicon Oxide Silicon Nitride Aluminium Metals if they cover less than 5% of the wafer area (ONLY RIE2!)	Photoresist DUV resist E-beam resist Silicon Oxide Silicon Nitride Aluminium Chromium (please try to avoid it)	Any material that is accepted in the machine
Etch rate range	Si3N4 @ 180 oC: ~84 Å/min Si3N4 @ 160 oC: ~60 Å/min	PECVD nitride: ~400-1000 Å/min	Typically 40-50 nm/min can be increased or decreased by using other recipe parameters.	Process dependant. Tested once to ~60nm/min	Process dependant. Has not been tested yet.
Substrate size	#1-25 100 mm wafers	#1-25 100mm wafers in our 100mm bath	As many small samples as can be fitted on the 100mm carrier. #1 100mm wafer (or smaller with carrier) #1 150mm wafer (only when the system is set up for 150mm)	As many small samples as can be fitted on a 100mm wafer #1 50 mm wafer fitted on a 100mm wafer #1 100 mm wafer #1 150 mm wafers (only when the system is set up to 150mm)	As many samples as can be securely fitted on a up to 200mm wafer #1 50 mm wafer with special carrier #1 100 mm wafer with special carrier #1 150 mm wafers with special carrier #1 200 mm wafer
Allowed materials	Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride	Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist Blue film	Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist Other metals if they cover less than 5% of the wafer area (ONLY RIE2!) Quartz/fused silica	Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist zep resist Aluminium Chromium (try to avoid it) Quartz/fused silica	Silicon Silicon oxides Silicon (oxy)nitrides Metals from the +list Metals from the -list Alloys from the above list Stainless steel Glass III-V materials Resists Polymers Capton tape