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Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions

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2,908 edits
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*Anisotropic etch: vertical sidewalls
*Anisotropic etch: vertical sidewalls
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*State-of-the-art dry silicon etcher with atmospheric cassette loader
*AOE
*Extremely high etch rate and advanced processing options
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*As RIE but better for high aspect ratio etching and deep etches (higher etch rate)
*ASE
*Good selectivity to photoresist
*The ASE is dedicated to polymer etch, which can affect the Si etch stability.
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*This is dedicated to metal etch. So fare only Si etch of nanostructures has been explored on the system.
*This is dedicated to metal etch.
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*Primarily for pure physical etch by sputtering with Ar-ions
*Primarily for pure physical etch by sputtering with Ar-ions
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!Possible masking materials
!Possible masking materials
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*Silicon Nitride
*Silicon Oxide
*Silicon Oxide
*PolySilicon
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*Photoresist
*Photoresist
*PolySilicon
*Blue film
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*Photoresist
*Photoresist
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*Silicon Nitride
*Silicon Nitride
*Aluminium
*Aluminium
*Chromium (ONLY RIE2!)
*Metals if they cover less than 5% of the wafer area (ONLY RIE2!)
*Other metals if they cover less than 5% of the wafer area (ONLY RIE2!)
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AOE
*Photoresist and zep resist
*Photoresist and zep resist
*Silicon Oxide
*Silicon Oxide
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*Aluminium oxide
*Aluminium oxide
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ASE
*Photoresist
*Photoresist
*Silicon Oxide
*Silicon Oxide
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*Aluminium
*Aluminium
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ICP Metal
*Photo-, DUV- and e-beamresist
*Photo-, DUV- and e-beamresist
*Silicon Oxide
*Silicon Oxide
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