Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions
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!style="background:silver; color:black" align="left"|Performance | !style="background:silver; color:black" align="left"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | |style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | ||
*~ | *~40nm - 30µm | ||
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|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Step coverage | |style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Step coverage | ||
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**with layers of silicon oxide or silicon (oxy)nitride | **with layers of silicon oxide or silicon (oxy)nitride | ||
*Quartz wafers | *Quartz wafers | ||
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|style="background:silver; color:black"|.|| style="background:LightGrey; color:black"|Material allowed on the substrate | |||
|style="background:WhiteSmoke; color:black"| | |||
*Aluminium | |||
*All metals < 5% of the substrate coverage (ONLY PECVD3!) | |||
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