Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions

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 ==Introduction==
 [[image:Furnace_nitride1.jpg|300x300px|right|thumb|B2 Furnace LPCVD Nitride: positioned in cleanroom 2]]
-The furnace is a Tempress horisontal furnace. The process is a batch process meaning you can run a batch of 25 wafers at a time. The deposition takes place at temperatures of 800-835 degrees Celsius. The reactive gases are Ammonia and dichlorsilane. The LPCVD nitride has a good step coverage and the film thickness is very uniform over the wafer. We have two standard LPCVD nitride processes: One for depositing stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and one for deposition of low stress nitride (SNR). To get information on how to operate the furnace please read the manual which is uploaded to LabManager.
+At the moment there is one furnace for silicon nitride depositions at Danchip. The furnace is a Tempress horizontal furnace. The process is a batch process meaning you can run a batch of 25 wafers at a time. The deposition takes place at temperatures of 800-835 degrees Celsius. The reactive gases are Ammonia and dichlorsilane. The LPCVD nitride has a good step coverage and the film thickness is very uniform over the wafer. We have two standard LPCVD nitride processes: One for depositing stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and one for deposition of low stress nitride (SNR). To get information on how to operate the furnace please read the manual which is uploaded to LabManager.
 ==Process Knowledge==