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Specific Process Knowledge/Etch/Etching of Polymer: Difference between revisions

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|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|Generel description - method 1
|The ASE was originally for deep Si etch but has now been turned into a polymer etcher. It should be used for pattering polymers
|Generel description - method 2
|The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering af polymers. 
|Generel description - method 3
|The plasma asher is good for dry stripping polymers. It can also be used for descum and pattering af polymers. This plasma asher is for Si wafers without metals.
|Generel description - method 4
|RIE2 can etch polymers in almost the same way as the ASE. We prefer the you use the ASE but there can be situations where the sample will not be allowed in the ASE (e.g. if there are metal on). If you think you need to use the RIE2 for polymer etching you need to get a special permission from the plasma group, see contact info on the RIE2 page in LabManager.
|Generel description - method 5
|Wet polymer etch is used for stripping a resist/polymer when it is no longer needed. E.g. removing resist masks.
 
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