Specific Process Knowledge/Etch/Etching of Platinum: Difference between revisions

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Etching of Platinum can be done either by wet etch or by sputtering with ions.

	Pt wet etch	IBE (Ionfab300+)
Generel description	Wet etch of Pt	Sputtering of Pt
Etch rate range	~?nm/min	~30nm/min (not tested yet)
Etch profile	Isotropic	Anisotropic (angles sidewalls, typical around 70 dg)
Masking material	None (only used for stripping Pt)	Any material that is allowed in the chamber, photoresists included
Substrate size	Any size and number that can go inside the beaker in use	Smaller pieces glued to carrier wafer #1 50mm wafer #1 100mm wafer #1 150mm wafer #1 200mm wafer
Allowed materials	No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals	Silicon Silicon oxides Silicon nitrides Metals from the +list Metals from the -list Alloys from the above list Stainless steel Glass III-V materials Resists Polymers Capton tape

Revision as of 11:04, 8 April 2013 view source BGE (talk \| contribs) Bureaucrats, danchip, Administrators 2,908 edits →Comparison of Platinum Etch Methods ← Older edit		Revision as of 11:05, 8 April 2013 view source BGE (talk \| contribs) Bureaucrats, danchip, Administrators 2,908 edits No edit summary Newer edit →
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