Specific Process Knowledge/Etch/Etching of Gold: Difference between revisions

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*~60nm/min (Al+1.5% Si)
*~60nm/min (Al+1.5% Si)
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*~30nm/min (not tested yet)  
*~30nm/min (not tested yet)  
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Revision as of 09:26, 8 April 2013

Ething of Gold can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done with IBE by sputtering with Ar ions.


Etching of Gold

Wet Gold Etch: Done in the fumehood positioned in cleanroom 2

Etching of Gold is done wet at Danchip making your own set up in a beaker in the fumehood. We have two different solutions:

  1. Iodine etch: KI:I2:H2O - 100g:25g:500ml - standard at Danchip. Can be used with AZ resist as mask.
  2. Aqua Regia (Kongevand): HNO3:HCl - 1:3 - A very strong acid witch will etch most metals and are therefore used when you wish to remove all the gold from your wafer. you have to be very carefull when you work with Aqua Regia (Kongevand) It can generate nitrous gases witch are very toxic!!


Comparing the two solutions

Iodine based gold etch Aqua Regia (Kongevand)
General description

Etch of pure Gold with or without photoresist mask.

Etch of pure Gold (as stripper).

Chemical solution KI:I2:H2O (100g:25g:500ml) HCl:HNO3 (3:1)
Process temperature 20 oC 20 oC
Possible masking materials

Photoresist (1.5 µm AZ5214E)

Unmasked - used as a stripper

Etch rate

~100 nm/min

~(??) nm/min - fast etch

Batch size

1-5 4" wafers at a time

1-5 4" wafer at a time

Size of substrate

2-6" wafers

2-6" wafers


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Etching of Gold

Etching of Gold can be done either by wet etch, dry etch or by sputtering with ions.


Comparison of Gold Etch Methods

Al wet etch 1 Al wet etch 2 IBE (Ionfab300+)
Generel description Wet etch of pure Al Wet etch of Al + 1.5% Si Sputtering of Al - pure physical etch
Etch rate range
  • ~100nm/min (pure Al)
  • ~60nm/min (Al+1.5% Si)
  • ~30nm/min (not tested yet)
Etch profile
  • Isotropic
  • Isotropic
  • Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size
  • #1-25 100 mm wafers
  • #1-25 100 mm wafers

Smaller pieces glued to carrier wafer

  • #1 50mm wafer
  • #1 100mm wafer
  • #1 150mm wafer
  • #1 200mm wafer
Allowed materials
  • Aluminium
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist
  • Aluminium
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride
  • Photoresist
  • E-beam resist
  • Silicon
  • Silicon oxides
  • Silicon nitrides
  • Metals from the +list
  • Metals from the -list
  • Alloys from the above list
  • Stainless steel
  • Glass
  • III-V materials
  • Resists
  • Polymers
  • Capton tape