Specific Process Knowledge/Etch/Wet Gold Etch: Difference between revisions
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Created page with "Ething of Gold can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done with [[Specific Process Knowledge/Etch/IBE⁄IBSD Ionf..." |
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===Comparing the two solutions=== | ===Comparing the two solutions=== | ||
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! | ! | ||
! Iodine based gold etch | ! Iodine based gold etch | ||
! Aqua Regia (Kongevand) | ! Aqua Regia (Kongevand) | ||
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!General description | |||
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Etch of pure Gold with or without photoresist mask. | Etch of pure Gold with or without photoresist mask. | ||
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Etch of pure Gold (as stripper). | Etch of pure Gold (as stripper). | ||
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|-style="background:LightGrey; color:black" | |||
!Chemical solution | |||
|KI:I<sub>2</sub>:H<sub>2</sub>O (100g:25g:500ml) | |KI:I<sub>2</sub>:H<sub>2</sub>O (100g:25g:500ml) | ||
|HCl:HNO<sub>3</sub> (3:1) | |HCl:HNO<sub>3</sub> (3:1) | ||
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|-style="background:WhiteSmoke; color:black" | |||
!Process temperature | |||
|20 <sup>o</sup>C | |20 <sup>o</sup>C | ||
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!Possible masking materials | |||
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Photoresist (1.5 µm AZ5214E) | Photoresist (1.5 µm AZ5214E) | ||
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Unmasked - used as a stripper | Unmasked - used as a stripper | ||
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!Etch rate | |||
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~100 nm/min | ~100 nm/min | ||
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~(??) nm/min - fast etch | ~(??) nm/min - fast etch | ||
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|-style="background:LightGrey; color:black" | |||
!Batch size | |||
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1-5 4" wafers at a time | 1-5 4" wafers at a time | ||
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1-5 4" wafer at a time | 1-5 4" wafer at a time | ||
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!Size of substrate | |||
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2-6" wafers | 2-6" wafers | ||