Specific Process Knowledge/Thin film deposition/Deposition of Tantalum: Difference between revisions

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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! Sputter (Lesker)
! Sputter ([[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Lesker]])
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| Batch size
| Batch size

Revision as of 09:33, 4 April 2013

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Tantalum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Alcatel) Sputter (Lesker)
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • up to 1x6" wafer
Pre-clean RF Ar clean RF Ar clean
Layer thickness 10Å to 1µm 10Å to
Deposition rate 2Å/s to 15Å/s ~0.3Å/s