Specific Process Knowledge/Thin film deposition/Deposition of Tantalum: Difference between revisions
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ||
! Sputter (Lesker) | ! Sputter ([[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Lesker]]) | ||
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| Batch size | | Batch size |
Revision as of 09:33, 4 April 2013
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Tantalum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
E-beam evaporation (Alcatel) | Sputter (Lesker) | |
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Batch size |
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Pre-clean | RF Ar clean | RF Ar clean |
Layer thickness | 10Å to 1µm | 10Å to |
Deposition rate | 2Å/s to 15Å/s | ~0.3Å/s |