Specific Process Knowledge/Thin film deposition/Deposition of Palladium: Difference between revisions

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{| border="1" cellspacing="0" cellpadding="4"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-style="background:silver; color:black"
!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
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*smaller pieces
*smaller pieces
|-
|-
|-style="background:silver; color:black"
| Pre-clean
| Pre-clean
|RF Ar clean
|RF Ar clean
|-
|-
|-style="background:WhiteSmoke; color:black"
| Layer thickness
| Layer thickness
|10Å to 1µm  
|10Å to 1µm  
|-
|-
|-style="background:silver; color:black"
| Deposition rate
| Deposition rate
|2Å/s to 15Å/s
|2Å/s to 10Å/s
|-
|-
|}
|}

Revision as of 14:30, 29 January 2014

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Palladium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Alcatel)
Batch size
  • Up to 1x4" wafers
  • smaller pieces
Pre-clean RF Ar clean
Layer thickness 10Å to 1µm
Deposition rate 2Å/s to 10Å/s