Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions
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![[Specific Process Knowledge/Etch/Wet | ![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch 1]] | ||
![[Specific Process Knowledge/Etch/Wet | ![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch 2]] | ||
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Ething of Chromium can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done either with [[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP]] using Chlorine chemistry or with [[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE]] by sputtering with Ar ions. | Ething of Chromium can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done either with [[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP]] using Chlorine chemistry or with [[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE]] by sputtering with Ar ions. | ||
==Wet etching of Chromium== | ==Wet etching of Chromium== |
Revision as of 13:58, 12 March 2013
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Etching of Chromium
Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.
Comparison of Aluminium Etch Metodes
Cr wet etch 1 | Cr wet etch 2 | ICP metal | IBE (Ionfab300+) | |
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Generel description | Wet etch of pure Al | Wet etch of Al + 1.5% Si | Dry plasma etch of Al | Sputtering of Al - pure physical etch |
Etch rate range |
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Etch profile |
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Substrate size |
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Smaller pieces glued to carrier wafer
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Allowed materials |
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Ething of Chromium can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done either with ICP using Chlorine chemistry or with IBE by sputtering with Ar ions.
Wet etching of Chromium
Wet etching of chromium at Danchip is done making your own set up in a beaker in a fume hood - preferably in cleanroom 2 or 4. We have two solution for this:
- HNO3:H2O:cerisulphate - 90ml:1200ml:15g - standard at Danchip
- Commercial chromium etch
Etch rate are depending on the level of oxidation of the metal.
How to mix the Chromium etch 1:
- Take a beaker and add 15g of cerisulphate.
- Add a little water while stirring - make sure all lumps are gone.
- Add water until 600 ml - keep stirring (use magnetic stirring)
- Add 90 ml HNO3
- When the cerisulphate is completely dissolved (clear liquid) you can add the other 600 ml of wafer.
Overview of the data for the chromium etches
Chromium etch 1 | Chromium etch 2 | |
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General description |
Etch of chromium |
Etch of chromium |
Chemical solution | HNO3:H2O:cerisulphate - 90ml:1200ml:15g | . |
Process temperature | Room temperature | . |
Possible masking materials |
Photoresist (1.5 µm AZ5214E) |
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Etch rate |
~40-100 nm/min |
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Batch size |
1-25 wafers at a time |
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Size of substrate |
4" wafers |
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Allowed materials |
No restrictions. Make a note on the bottle of which materials have been processed. |
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Dry etching of chromium
On the ICP Metal Etch tool a recipe for chromium is being developed.