Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions
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==Etching of Aluminium== | |||
Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions. | |||
*[[Specific Process Knowledge/Etch/Wet Aluminium Etch|Etching of Al by wet etch]] | |||
*[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/Aluminium|Etching of Al by dry etch]] | |||
*[[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|Sputtering of Al]] | |||
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==Comparison of Aluminium Etch Metodes== | |||
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![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Al wet etch 1]] | |||
![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Al wet etch 2]] | |||
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|Al etch by ICP metal]] | |||
![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|Al sputtering by IBE (Ionfab300+)]] | |||
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!Generel description | |||
|Wet etch of pure Al | |||
|Wet etch of Al + 1.5% Si | |||
|Dry plasma etch of Al | |||
|Sputtering of Al - pure physical etch | |||
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!Etch rate range | |||
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*~100nm/min (pure Al) | |||
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*~60nm/min (Al+1.5% Si) | |||
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*~350 nm/min (depending on features size and etch load) | |||
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*~30nm/min (not tested yet) | |||
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!Etch profile | |||
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*Isotropic | |||
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*Isotropic | |||
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*Anisotropic (vertical sidewalls) | |||
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*Anisotropic (angles sidewalls, typical around 70 dg) | |||
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!Substrate size | |||
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*<nowiki>#</nowiki>1-25 100 mm wafers | |||
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*<nowiki>#</nowiki>1-25 100 mm wafers | |||
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*smaller pieces on a carrier wafer | |||
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers) | |||
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers) | |||
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Smaller pieces glued to carrier wafer | |||
*<nowiki>#</nowiki>1 50mm wafer | |||
*<nowiki>#</nowiki>1 100mm wafer | |||
*<nowiki>#</nowiki>1 150mm wafer | |||
*<nowiki>#</nowiki>1 200mm wafer | |||
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!'''Allowed materials''' | |||
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*Aluminium | |||
*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*E-beam resist | |||
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*Aluminium | |||
*Silicon | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Silicon Oxynitride | |||
*Photoresist | |||
*E-beam resist | |||
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*Silicon | |||
*Quartz/fused silica | |||
*Photoresist/e-beam resist | |||
*PolySilicon, | |||
*Silicon oxide | |||
*Silicon (oxy)nitride | |||
*Aluminium | |||
*Titanium | |||
*Chromium | |||
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*Silicon | |||
*Silicon oxides | |||
*Silicon nitrides | |||
*Metals from the +list | |||
*Metals from the -list | |||
*Alloys from the above list | |||
*Stainless steel | |||
*Glass | |||
*III-V materials | |||
*Resists | |||
*Polymers | |||
*Capton tape | |||
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Revision as of 13:52, 12 March 2013
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Etching of Aluminium
Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.
Comparison of Aluminium Etch Metodes
Al wet etch 1 | Al wet etch 2 | Al etch by ICP metal | Al sputtering by IBE (Ionfab300+) | |
---|---|---|---|---|
Generel description | Wet etch of pure Al | Wet etch of Al + 1.5% Si | Dry plasma etch of Al | Sputtering of Al - pure physical etch |
Etch rate range |
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Etch profile |
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Substrate size |
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Smaller pieces glued to carrier wafer
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Allowed materials |
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Ething of Chromium can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done either with ICP using Chlorine chemistry or with IBE by sputtering with Ar ions.
Wet etching of Chromium
Wet etching of chromium at Danchip is done making your own set up in a beaker in a fume hood - preferably in cleanroom 2 or 4. We have two solution for this:
- HNO3:H2O:cerisulphate - 90ml:1200ml:15g - standard at Danchip
- Commercial chromium etch
Etch rate are depending on the level of oxidation of the metal.
How to mix the Chromium etch 1:
- Take a beaker and add 15g of cerisulphate.
- Add a little water while stirring - make sure all lumps are gone.
- Add water until 600 ml - keep stirring (use magnetic stirring)
- Add 90 ml HNO3
- When the cerisulphate is completely dissolved (clear liquid) you can add the other 600 ml of wafer.
Overview of the data for the chromium etches
Chromium etch 1 | Chromium etch 2 | |
---|---|---|
General description |
Etch of chromium |
Etch of chromium |
Chemical solution | HNO3:H2O:cerisulphate - 90ml:1200ml:15g | . |
Process temperature | Room temperature | . |
Possible masking materials |
Photoresist (1.5 µm AZ5214E) |
. |
Etch rate |
~40-100 nm/min |
. |
Batch size |
1-25 wafers at a time |
. |
Size of substrate |
4" wafers |
. |
Allowed materials |
No restrictions. Make a note on the bottle of which materials have been processed. |
. |
Dry etching of chromium
On the ICP Metal Etch tool a recipe for chromium is being developed.