Specific Process Knowledge/Etch/Etching of Aluminium

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Etching of Aluminium

Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.

• Etching of Al by wet etch
• Etching of Al by dry etch
• Sputtering of Al

Comparison methode 1 and methode 2 for the process

	Al wet etch 1	Al wet etch 2	Al etch by ICP metal	Al sputtering by IBE (Ionfab300+)
Generel description	Wet etch of pure Al	Wet etch of Al + 1.5% Si	Dry plasma etch of Al	Sputtering of Al - pure physical etch
Etch rate range	~100nm/min (pure Al)	~60nm/min (Al+1.5% Si)	~350 nm/min (depending on features size and etch load)	~30nm/min (not tested yet)
Etch profile	Isotropic	Isotropic	Anisotropic (vertical sidewalls)	Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size	# small samples # 50 mm wafers # 100 mm wafers # 150 mm wafers	# small samples # 50 mm wafers # 100 mm wafers # 150 mm wafers
Allowed materials	Allowed material 1 Allowed material 2	Allowed material 1 Allowed material 2 Allowed material 3