Specific Process Knowledge/Etch/ICP Metal Etcher/Aluminium: Difference between revisions
No edit summary |
|||
| Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/Aluminium click here]''' | |||
=== Aluminium etch === | === Aluminium etch === | ||
Revision as of 16:33, 3 October 2013
Feedback to this page: click here
Aluminium etch
The aluminium etch has two steps:
- Breakthrough
- The breakthrough step is designed to break through the native aluminium oxide layer that is present on all aluminium surfaces. The duration of this step should remain fixed.
- Main
- The main step etches bulk aluminium.
| Parameter | Process step | |
|---|---|---|
| Breakthrough | Main | |
| Time (secs) | 20 | 40 (variable) |
| HBr (sccm) | - | 15 |
| Cl2 (sccm) | 20 | 25 |
| Pressure (mTorr) | 2, Strike 3 secs @ 15 mTorr??? | 1 |
| Coil power (W) | 600 | 500 |
| Platen power (W) | 125 | 100 |
| Temperature (oC) | 20 | 20 |
| Spacers (mm) | 30 | 30 |
| Results | ||
| Etch rate | ~350 nm/min (depending on features size and etch load) | |